Best in class SiSS52DN 30 V N-Channel MOSFET delivers high power density and efficiency for isolated and non-isolated topologies, with RDS(ON) down to 0.95 mW and enhanced FOM and RG parameters in PowerPAK® 1212-8s package. Saving energy in power conversion applications and delivering high performance in isolated and non-isolated topologies, the MOSFET simplifies part selection for designers.
Product Benefits:
Best in class on-resistance: 0.95 mW at 10 V
One of the lowest FOMs on the market: 29.8 mW*nC
Offered in the 3.3 mm by 3.3 mm thermally enhanced PowerPAK 1212-8S package
100 % RG- and UIS-tested, RoHS-compliant, and halogen-free
Market Applications:
Low side switching for synchronous rectification
synchronous buck converters
DC/DC converters
Switch tank topologies
OR-ring FETs
load switches for power supplies in servers and telecom and RF equipment
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